A new microwave-excited plasma etching equipment for separating plasma excited region from etching process region

Tetsuya Goto, Masaki Hirayama, Hiroshi Yamauchi, Makoto Moriguchi, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

A new microwave-excited plasma etching equipment has been developed. The equipment adopts a low-electron temperature and high-density plasma source using a radial line slot antenna and a newly developed metal shower head for etching gas supply into the low-electron temperature diffusion plasma region in order to control the decomposition of gasses. Ion flux and ion energy to a wafer can be individually controlled by adjusting the microwave power applied to the antenna and the rf power applied to the wafer stage. Contact holes of 100 nm wide in SiO2 were successfully etched using C5F8. Etching selectivity to the resist was improved by introducing C5F8 into the etching process region using the gas shower head, which indicates that excess decomposition of C5F8 is suppressed.

Original languageEnglish
Pages (from-to)1887-1891
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
DOIs
Publication statusPublished - 2003 Apr

Keywords

  • Excess decomposition
  • Microwave-excited plasma
  • RLSA
  • Reactive ion etching
  • Shower head
  • SiO etching

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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