A new method for predicting distribution of DRAM retention time

Y. Mori, R. Yamada, S. Kamohara, M. Moniwa, R. Ohyu, T. Yamanaka

    Research output: Contribution to journalConference articlepeer-review

    7 Citations (Scopus)

    Abstract

    A new method for predicting the distribution of retention time of a dynamic random access memory (DRAM) by using the test element group (TEG) has been developed. The TEG is constructed of memory cells, which are connected in parallel, so that the sum of memory-cell leakage currents can be measured. We verified that the tret main distribution can statistically predicted from the distribution of TEG leakage current. Furthermore, we determined the measurement condition for detecting some TEGs that contain anomalously leaky cells, which limit the DRAM refreshing interval.

    Original languageEnglish
    Pages (from-to)7-11
    Number of pages5
    JournalAnnual Proceedings - Reliability Physics (Symposium)
    Publication statusPublished - 2001 Jan 1
    Event39th Annual International Reliability Physics Symposium - Orlando, FL, United States
    Duration: 2001 Apr 302001 May 3

    Keywords

    • DRAM
    • Junction leakage
    • Retention time
    • Test element group (TEG)

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Safety, Risk, Reliability and Quality

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