A new method for predicting distribution of DRAM retention time

Y. Mori; R. Yamada; S. Kamohara; M. Moniwa; R. Ohyu; T. Yamanaka

A new method for predicting distribution of DRAM retention time

Y. Mori, R. Yamada, S. Kamohara, M. Moniwa, R. Ohyu, T. Yamanaka

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new method for predicting the distribution of retention time of a dynamic random access memory (DRAM) by using the test element group (TEG) has been developed. The TEG is constructed of memory cells, which are connected in parallel, so that the sum of memory-cell leakage currents can be measured. We verified that the t_ret main distribution can statistically predicted from the distribution of TEG leakage current. Furthermore, we determined the measurement condition for detecting some TEGs that contain anomalously leaky cells, which limit the DRAM refreshing interval.

Original language	English
Pages (from-to)	7-11
Number of pages	5
Journal	Annual Proceedings - Reliability Physics (Symposium)
Publication status	Published - 2001 Jan 1
Event	39th Annual International Reliability Physics Symposium - Orlando, FL, United States Duration: 2001 Apr 30 → 2001 May 3

Keywords

DRAM
Junction leakage
Retention time
Test element group (TEG)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

Fingerprint Dive into the research topics of 'A new method for predicting distribution of DRAM retention time'. Together they form a unique fingerprint.

Cite this

@article{bb868bf617a0439a922efaaaf344528a,

title = "A new method for predicting distribution of DRAM retention time",

abstract = "A new method for predicting the distribution of retention time of a dynamic random access memory (DRAM) by using the test element group (TEG) has been developed. The TEG is constructed of memory cells, which are connected in parallel, so that the sum of memory-cell leakage currents can be measured. We verified that the tret main distribution can statistically predicted from the distribution of TEG leakage current. Furthermore, we determined the measurement condition for detecting some TEGs that contain anomalously leaky cells, which limit the DRAM refreshing interval.",

keywords = "DRAM, Junction leakage, Retention time, Test element group (TEG)",

author = "Y. Mori and R. Yamada and S. Kamohara and M. Moniwa and R. Ohyu and T. Yamanaka",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "7--11",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "39th Annual International Reliability Physics Symposium ; Conference date: 30-04-2001 Through 03-05-2001",

}

TY - JOUR

T1 - A new method for predicting distribution of DRAM retention time

AU - Mori, Y.

AU - Yamada, R.

AU - Kamohara, S.

AU - Moniwa, M.

AU - Ohyu, R.

AU - Yamanaka, T.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - A new method for predicting the distribution of retention time of a dynamic random access memory (DRAM) by using the test element group (TEG) has been developed. The TEG is constructed of memory cells, which are connected in parallel, so that the sum of memory-cell leakage currents can be measured. We verified that the tret main distribution can statistically predicted from the distribution of TEG leakage current. Furthermore, we determined the measurement condition for detecting some TEGs that contain anomalously leaky cells, which limit the DRAM refreshing interval.

AB - A new method for predicting the distribution of retention time of a dynamic random access memory (DRAM) by using the test element group (TEG) has been developed. The TEG is constructed of memory cells, which are connected in parallel, so that the sum of memory-cell leakage currents can be measured. We verified that the tret main distribution can statistically predicted from the distribution of TEG leakage current. Furthermore, we determined the measurement condition for detecting some TEGs that contain anomalously leaky cells, which limit the DRAM refreshing interval.

KW - DRAM

KW - Junction leakage

KW - Retention time

KW - Test element group (TEG)

UR - http://www.scopus.com/inward/record.url?scp=0034995181&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034995181&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034995181

SP - 7

EP - 11

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

T2 - 39th Annual International Reliability Physics Symposium

Y2 - 30 April 2001 through 3 May 2001

ER -