A new metallic complex reaction etching for transition metals by a low-temperature neutral beam process

Xun Gu, Yoshiyuki Kikuchi, Toshihisa Nozawa, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We investigated a new oxidation reaction at a low temperature (-30°C) as a result of O2 neutral beam bombardment at a low activation energy (<0.025eV), which can efficiently form a thin oxide film of all transition metals, such as tantalum, ruthenium and platinum. Meanwhile, a new neutral beam enhanced chemical etching for the neutral beam oxidized transition metals that uses a new metallic complex reaction process and does not cause chemical or physical damage at low temperatures was also proposed. As a result, a highly anisotropic etching profile without re-deposition on the sidewall could be achieved with just the pure chemical reaction between ethanol and metallic oxide at a low kinetic energy using the neutral beam process.

Original languageEnglish
Article number322002
JournalJournal of Physics D: Applied Physics
Volume47
Issue number32
DOIs
Publication statusPublished - 2014 Aug 13

Keywords

  • activation energy
  • metal oxidation
  • metallic complex reaction
  • neutral beam etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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