A New LDD Transistor with Inverse-T Gate Structure

Tiao Yuan Huang, William W. Yao, Russel A. Martin, Alan G. Lewis, Mitsumasa Koyanagi, John Y. Chen

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

A new submicrometer inverse-T lightly doped drain (ITLDD) transistor structure for alleviating hot-electron effects is demonstrated, A thin extension of the polysilicon gate under the oxide sidewall spacer is formed, giving the gate cross section the appearance of an inverted letter T. Due to the unique self-aligned n-to-gate feature facilitated by the conducting polysilicon extension, the “spacer-induced degradation” existing in a conventional LDD transistor is eliminated in ITLDD devices. This allows the use of low n LDD doses for optimum channel electric field reduction and minimum post-implant drive-in for future VLSI compatibility. Submicrometer ITLDD transistors with good transconductance and hot-electron reliability have been achieved. The new ITLDD transistor offers a promising device structure for future VLSI applications.

Original languageEnglish
Pages (from-to)151-153
Number of pages3
JournalIEEE Electron Device Letters
Volume8
Issue number4
DOIs
Publication statusPublished - 1987 Apr

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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