A new interpretation of stress relaxation behavior in Si3N 4 ceramics

Z. L. Hong, H. Yoshida, T. Sakuma, Y. Ikuhara, T. Nishimura, M. Mitomo

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The stress relaxation behavior of silicon nitride ceramics was studied. The study took into consideration both the viscoelastic relaxation of residual amorphous phase and the plastic relaxation process of diffusion through the grain boundary interface. The model suggested a convenient way to predict the high temperature creep strength by stress relaxation experiments within a short time period.

Original languageEnglish
Pages (from-to)279-282
Number of pages4
JournalKey Engineering Materials
Volume247
Publication statusPublished - 2003 Jan 1
Externally publishedYes
EventAdvanced Ceramics and Composites - Shanghai, China
Duration: 2002 Nov 192002 Nov 22

Keywords

  • High-Temperature Creep
  • Silicon Nitride
  • Stress Relaxation

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'A new interpretation of stress relaxation behavior in Si<sub>3</sub>N <sub>4</sub> ceramics'. Together they form a unique fingerprint.

  • Cite this

    Hong, Z. L., Yoshida, H., Sakuma, T., Ikuhara, Y., Nishimura, T., & Mitomo, M. (2003). A new interpretation of stress relaxation behavior in Si3N 4 ceramics. Key Engineering Materials, 247, 279-282.