A new interpretation of stress relaxation behavior in Si3N 4 ceramics

Z. L. Hong; H. Yoshida; T. Sakuma; Y. Ikuhara; T. Nishimura; M. Mitomo

A new interpretation of stress relaxation behavior in Si₃N ₄ ceramics

Z. L. Hong, H. Yoshida, T. Sakuma, Y. Ikuhara, T. Nishimura, M. Mitomo

Research output: Contribution to journal › Conference article › peer-review

Abstract

The stress relaxation behavior of silicon nitride ceramics was studied. The study took into consideration both the viscoelastic relaxation of residual amorphous phase and the plastic relaxation process of diffusion through the grain boundary interface. The model suggested a convenient way to predict the high temperature creep strength by stress relaxation experiments within a short time period.

Original language	English
Pages (from-to)	279-282
Number of pages	4
Journal	Key Engineering Materials
Volume	247
Publication status	Published - 2003 Jan 1
Externally published	Yes
Event	Advanced Ceramics and Composites - Shanghai, China Duration: 2002 Nov 19 → 2002 Nov 22

Keywords

High-Temperature Creep
Silicon Nitride
Stress Relaxation

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "A new interpretation of stress relaxation behavior in Si3N 4 ceramics",

abstract = "The stress relaxation behavior of silicon nitride ceramics was studied. The study took into consideration both the viscoelastic relaxation of residual amorphous phase and the plastic relaxation process of diffusion through the grain boundary interface. The model suggested a convenient way to predict the high temperature creep strength by stress relaxation experiments within a short time period.",

keywords = "High-Temperature Creep, Silicon Nitride, Stress Relaxation",

author = "Hong, {Z. L.} and H. Yoshida and T. Sakuma and Y. Ikuhara and T. Nishimura and M. Mitomo",

year = "2003",

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language = "English",

volume = "247",

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note = "Advanced Ceramics and Composites ; Conference date: 19-11-2002 Through 22-11-2002",

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T1 - A new interpretation of stress relaxation behavior in Si3N 4 ceramics

AU - Hong, Z. L.

AU - Yoshida, H.

AU - Sakuma, T.

AU - Ikuhara, Y.

AU - Nishimura, T.

AU - Mitomo, M.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The stress relaxation behavior of silicon nitride ceramics was studied. The study took into consideration both the viscoelastic relaxation of residual amorphous phase and the plastic relaxation process of diffusion through the grain boundary interface. The model suggested a convenient way to predict the high temperature creep strength by stress relaxation experiments within a short time period.

AB - The stress relaxation behavior of silicon nitride ceramics was studied. The study took into consideration both the viscoelastic relaxation of residual amorphous phase and the plastic relaxation process of diffusion through the grain boundary interface. The model suggested a convenient way to predict the high temperature creep strength by stress relaxation experiments within a short time period.

KW - High-Temperature Creep

KW - Silicon Nitride

KW - Stress Relaxation

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M3 - Conference article

AN - SCOPUS:0042514854

SN - 1013-9826

VL - 247

SP - 279

EP - 282

JO - Key Engineering Materials

JF - Key Engineering Materials

T2 - Advanced Ceramics and Composites

Y2 - 19 November 2002 through 22 November 2002

ER -

A new interpretation of stress relaxation behavior in Si₃N ₄ ceramics

Abstract

Keywords

ASJC Scopus subject areas

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