A new insight into the dynamic fluctuation mechanism of stress-induced leakage current

T. Ishida, N. Tega, Y. Mori, H. Miki, T. Mine, H. Kume, K. Torii, M. Muraguchi, Y. Takada, K. Shiraishi, R. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

The dynamic fluctuation of stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. The effect of V-SILC on flash memory retention increases with the scaling down of device dimensions because the amplitude of V-SILC is constant and does not depend on the gate area. A statistical analysis of V-SILC indicated that V-SILC is random telegraph noise (RTN) of gate SILC and is associated with the state transition of a single defect in a gate oxide. The state transition of the defect is caused by an electron collision with the defect.

Original languageEnglish
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages604-609
Number of pages6
DOIs
Publication statusPublished - 2008 Sep 17
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: 2008 Apr 272008 May 1

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period08/4/2708/5/1

Keywords

  • Dynamic fluctuation
  • RTN
  • Random telegraph noise
  • SILC
  • Stress-induced leakage current

ASJC Scopus subject areas

  • Engineering(all)

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