A new fabrication technology of FinFETs using a neutral beam etching

Kazuhikp Endo, Shuichi Noda, Takuya Ozaki, Seiji Samukawa, Meishoku Masahata, Yongxun Liu, Kenichi Ishii, Hidenori Takashima, Etsuro Sugimata, Takashi Matsukawa, Yuki Yamauchi, Yuki Ishikawa, Eiichi Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Rectangular Si-Fin channel and Si-FinFETs were successfully fabricated to take advantage of the low-energy and damage-free characteristic of the newly proposed neutral beam etching system.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2005
Subtitle of host publication2005 International Microprocesses and Nanotechnology Conference
Pages228-229
Number of pages2
Publication statusPublished - 2005
Event2005 International Microprocesses and Nanotechnology Conference - Tokyo, Japan
Duration: 2005 Oct 252005 Oct 28

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
Volume2005

Other

Other2005 International Microprocesses and Nanotechnology Conference
CountryJapan
CityTokyo
Period05/10/2505/10/28

ASJC Scopus subject areas

  • Engineering(all)

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