A new approach to realize high performance RF power FETs on Si(110) surface

Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon-on-insulator (SOI) LDMOS has been considered the promising technology for radio-frequency (RF) power FETs because of its merits of high power efficiency, low standby power, outclassing RF characteristics using high resistivity base substrate and so on [1-2]. However, it is very important to improve the current drivability and suppress the flicker noise in the MOSFETs to realize the high performance RF power devices [3]. It has been reported that the hole mobility on Si(110) surface is much larger than that on Si(100) [4] and indicates the possibility for improving the CMOS performance. This experimental study reports the new approach to realize a very high performance RF power FETs on Si(110) surfaces using accumulation-mode (AM) SOI device structure with very large current drivability and very low noise level. We demonstrate that this high-speed and low-noise novel balanced CMOS device obviously improves the inverter, ring oscillator circuit performance.

Original languageEnglish
Title of host publicationPESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Proceedings
Pages3854-3856
Number of pages3
DOIs
Publication statusPublished - 2008 Sep 29
EventPESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Rhodes, Greece
Duration: 2008 Jun 152008 Jun 19

Publication series

NamePESC Record - IEEE Annual Power Electronics Specialists Conference
ISSN (Print)0275-9306

Other

OtherPESC '08 - 39th IEEE Annual Power Electronics Specialists Conference
CountryGreece
CityRhodes
Period08/6/1508/6/19

ASJC Scopus subject areas

  • Modelling and Simulation
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A new approach to realize high performance RF power FETs on Si(110) surface'. Together they form a unique fingerprint.

  • Cite this

    Cheng, W., Teramoto, A., & Ohmi, T. (2008). A new approach to realize high performance RF power FETs on Si(110) surface. In PESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Proceedings (pp. 3854-3856). [4592556] (PESC Record - IEEE Annual Power Electronics Specialists Conference). https://doi.org/10.1109/PESC.2008.4592556