A new AlGaAs/GaAs heterojunction fet with insulated gate structure (MISSFET)

Takashi Hotta, Hiroyuki Sakaki, Hideo Ohno

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have proposed and successfully fabricated a new type of field-effect transistor (FET) with an M-I-S-S structure, which consists of a metal gate, an Al2O3 insulator and a semiconductor-semiconductor (N-AlGaAs/GaAs) heterojunction, grown by molecular beam epitaxy. This device exhibited the following advantages. High effective mobility of electrons (µeff being 27,000 cm2/V·s at 77 K) and, the capability of sustaining a high gate voltage of up to 2 V in the forward direction. These features permit the use of MISSFETs in a variety of logic circuits with a larger logic swing and higher speed than those of MESFETs.

Original languageEnglish
Pages (from-to)L122-L124
JournalJapanese journal of applied physics
Volume21
Issue number2 A
DOIs
Publication statusPublished - 1982 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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