A new 1-D conducting state stabilized by strong H-bondings in halogen-bridged metal complexes

H. Okamoto, K. Toriumi, K. Okaniwa, T. Mitani, M. Yamashita

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18 Citations (Scopus)

Abstract

The 1-D bromo-bridged Ni complex with strongly enhanced 2-D H-bond network has the Mott-Hubbard-type electronic state, in which the electron-electron repulsive energy is responsible for gap-opening. In spite of the large optical gap (ca. 1.3 eV), the conductivity is fairly high (ca. 0.2 S/cm at R. T.) suggesting the presence of low energy carriers induced by the 1-D charge density instability. The possibility of the phase transition from the Peierls system to the Mott-Hubbard system has been checked by the hydrostatic-pressure effect on Raman scattering of the bromo-bridged Pd complex.

Original languageEnglish
Pages (from-to)2791-2794
Number of pages4
JournalSynthetic Metals
Volume42
Issue number3
DOIs
Publication statusPublished - 1991 May 29
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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