A neutral beam process for controlling surface defect generation and chemical reactions at the atomic layer

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26 Citations (Scopus)

Abstract

Advances in plasma process technology have contributed directly to advances in theminiaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the authors is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. We are using this technique to develop future innovative nanodevices.

Original languageEnglish
Pages (from-to)N5089-N5094
JournalECS Journal of Solid State Science and Technology
Volume4
Issue number6
DOIs
Publication statusPublished - 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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