A nanostructual microwave probe used for atomic force microscope

Y. Ju; M. Hamada; T. Kobayashi; H. Soyama

doi:10.1109/DTIP.2008.4752974

A nanostructual microwave probe used for atomic force microscope

Y. Ju, M. Hamada, T. Kobayashi, H. Soyama

ENG - Finemechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8 μm high, and curvature radius about 50 nm was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was introduced by using FIB fabrication. AFM topography of a grating sample was measured by using the fabricated GaAs microwave probe. The fabricated probe was found having nanometer scale resolution, and microwave emission was detected successfully at the tip of the probe by approaching Cr-V steel and Au wire samples.

Original language	English
Title of host publication	DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Pages	158-161
Number of pages	4
DOIs	https://doi.org/10.1109/DTIP.2008.4752974
Publication status	Published - 2008
Event	DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - Nice, France Duration: 2008 Apr 9 → 2008 Apr 11

Publication series

Name	DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

Other

Other	DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Country/Territory	France
City	Nice
Period	08/4/9 → 08/4/11

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/DTIP.2008.4752974

Cite this

Ju, Y., Hamada, M., Kobayashi, T., & Soyama, H. (2008). A nanostructual microwave probe used for atomic force microscope. In DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (pp. 158-161). [4752974] (DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS). https://doi.org/10.1109/DTIP.2008.4752974

A nanostructual microwave probe used for atomic force microscope. / Ju, Y.; Hamada, M.; Kobayashi, T. et al.

DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. 2008. p. 158-161 4752974 (DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ju, Y, Hamada, M, Kobayashi, T & Soyama, H 2008, A nanostructual microwave probe used for atomic force microscope. in DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS., 4752974, DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, pp. 158-161, DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Nice, France, 08/4/9. https://doi.org/10.1109/DTIP.2008.4752974

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abstract = "In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8 μm high, and curvature radius about 50 nm was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was introduced by using FIB fabrication. AFM topography of a grating sample was measured by using the fabricated GaAs microwave probe. The fabricated probe was found having nanometer scale resolution, and microwave emission was detected successfully at the tip of the probe by approaching Cr-V steel and Au wire samples.",

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year = "2008",

doi = "10.1109/DTIP.2008.4752974",

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AU - Hamada, M.

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AU - Soyama, H.

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N2 - In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8 μm high, and curvature radius about 50 nm was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was introduced by using FIB fabrication. AFM topography of a grating sample was measured by using the fabricated GaAs microwave probe. The fabricated probe was found having nanometer scale resolution, and microwave emission was detected successfully at the tip of the probe by approaching Cr-V steel and Au wire samples.

AB - In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8 μm high, and curvature radius about 50 nm was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was introduced by using FIB fabrication. AFM topography of a grating sample was measured by using the fabricated GaAs microwave probe. The fabricated probe was found having nanometer scale resolution, and microwave emission was detected successfully at the tip of the probe by approaching Cr-V steel and Au wire samples.

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Y2 - 9 April 2008 through 11 April 2008

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A nanostructual microwave probe used for atomic force microscope

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