A nanostructual microwave probe used for atomic force microscope

Y. Ju, M. Hamada, T. Kobayashi, H. Soyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8 μm high, and curvature radius about 50 nm was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was introduced by using FIB fabrication. AFM topography of a grating sample was measured by using the fabricated GaAs microwave probe. The fabricated probe was found having nanometer scale resolution, and microwave emission was detected successfully at the tip of the probe by approaching Cr-V steel and Au wire samples.

Original languageEnglish
Title of host publicationDTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Pages158-161
Number of pages4
DOIs
Publication statusPublished - 2008
EventDTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - Nice, France
Duration: 2008 Apr 92008 Apr 11

Publication series

NameDTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

Other

OtherDTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Country/TerritoryFrance
CityNice
Period08/4/908/4/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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