A mulitiple-exposure, linear response, wide-dynamic-range CMOS image sensor combining electric-charge voltage conversions in pixel capacitor and column capacitor

Noriko Ide, Nana Akahane, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

Abstract

We discuss the operation methods for keeping a high S/N ratio at all switching points in multiple exposures and for shorting the total integration time of a wide dynamic range (DR) lateral overflow integration capacitor (LOFIC) CMOS image sensor that combines electric-charge voltage conversions in a pixel and a column capacitor. We have used these methods on a color LOFIC CMOS image sensor. This sensor had a pixel pitch of 5.6-um and the number of effective pixels was 800 (H) × 600 (V). It was made by using 0.18-um 2P3M CMOS technology. Fully linear responses were obtained, as well as a DR of 207 dB. Furthermore, the S/N ratio was 26-dB for the image of 18% gray card at all the switching points between the multiple exposures. The total exposure time wasl/13-sec and was obtained by three photoelectric conversion operations at FD and LOFIC capacitors and one photoelectric conversion operation in the column capacitor.

Original languageEnglish
Pages (from-to)335-342
Number of pages8
JournalKyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers
Volume64
Issue number3
DOIs
Publication statusPublished - 2010 Mar

ASJC Scopus subject areas

  • Media Technology
  • Computer Science Applications
  • Electrical and Electronic Engineering

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