A model for the temperature-dependent adsorption kinetics of SiH 4 on Si(100)

Maki Suemitsu, Ki Joon Kim, Hideki Nakazawa, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Silane adsorption kinetics on Si(100) at elevated temperatures has been investigated from the gas-source MBE growth rate and hydrogen coverage of the grown surface at T = 450-850°C. Silane adsorption most probably changes its mode near 600°C, from two-site adsorption below this temperature to four-site adsorption as the adsorption temperature is increased. A unified interpretation is given for this temperature-dependent behavior of silane adsorption, from the possible presence of a SiH 3 adsorption precursor and its thermally activated desorption from the surface.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalApplied Surface Science
Publication statusPublished - 1996 Nov

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'A model for the temperature-dependent adsorption kinetics of SiH <sub>4</sub> on Si(100)'. Together they form a unique fingerprint.

Cite this