TY - JOUR
T1 - A mild reduction-phosphidation approach to nanocrystalline GaP
AU - Chen, Luyang
AU - Luo, Tao
AU - Huang, Mingxing
AU - Gu, Yunle
AU - Shi, Liang
AU - Qian, Yitai
N1 - Funding Information:
This work is supported by the Chinese National Natural Science Foundation.
PY - 2004/12
Y1 - 2004/12
N2 - Nanocrystalline gallium phosphide (GaP) has been prepared through a reduction-phosphidation by using Ga, PCl3 as gallium and phosphorus sources and metallic sodium as reductant at 350°C. The XRD pattern can be indexed as cublic GaP with the lattice constant of a = 5.446 Å. The TEM image shows particle-like polycrystals and flake-like single crystals. The PL spectrum exhibits one peak at 330 nm for the as-prepared nanocrystalline GaP.
AB - Nanocrystalline gallium phosphide (GaP) has been prepared through a reduction-phosphidation by using Ga, PCl3 as gallium and phosphorus sources and metallic sodium as reductant at 350°C. The XRD pattern can be indexed as cublic GaP with the lattice constant of a = 5.446 Å. The TEM image shows particle-like polycrystals and flake-like single crystals. The PL spectrum exhibits one peak at 330 nm for the as-prepared nanocrystalline GaP.
KW - A. Gallium phosphide
KW - B. Chemical synthesis
KW - C. Transmission electron microscopy
KW - C. X-ray diffraction
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U2 - 10.1016/j.ssc.2004.09.023
DO - 10.1016/j.ssc.2004.09.023
M3 - Article
AN - SCOPUS:8344277891
VL - 132
SP - 667
EP - 671
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 10
ER -