A method for quantitative evaluation of electrical conductivity of silicon wafers by millimeter-waves

Yang Ju, Yasushi Ohno, Masumi Saka

Research output: Contribution to journalConference articlepeer-review

Abstract

We present a method for quantitative measurement of electrical conductivity of semiconductor wafers in a contactless fashion by using millimeter-waves. A focusing sensor was used to focus a 110 GHz millimeter-wave beam on the surface of a silicon wafer. The amplitude and the phase of the reflection coefficient of the millimeter-wave signal were measured by which electrical conductivity of the wafer was determined quantitatively, independent of the permittivity and thickness of the wafers. The conductivity obtained by this method agrees well with that measured by the conventional four-point-probe method.

Original languageEnglish
Pages (from-to)41-45
Number of pages5
JournalKey Engineering Materials
Volume270-273
Issue numberI
DOIs
Publication statusPublished - 2004
EventProceedings of the 11th Asian Pacific Conference on Nondestructive Testing - Jeju Island, Korea, Republic of
Duration: 2003 Nov 32003 Nov 7

Keywords

  • Calibration
  • Conductivity
  • Millimeter-wave
  • Quantitative evaluation
  • Silicon wafer

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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