A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs

S. Wada, Y. Nonaka, T. Saito, T. Tominari, K. Koyu, K. Ikeda, K. Sakai, K. Sasahara, K. Watanabe, H. Fujiwara, F. Murata, E. Ohue, Y. Kiyota, H. Shimamoto, K. Washio, R. Takeyari, H. Hosoe, T. Hashimoto

Research output: Contribution to conferencePaper

12 Citations (Scopus)

Abstract

A highly manufacturable 0.18-μm SiGe BiCMOS technology has been developed for 40-Gb/s optical communication LSIs. A high fT / fmax of 140/183 GHz in the self-aligned SiGe HBT was achieved with highly reliable yield and device reliability. An optimized process flow and reduced thermal budgets of the SiGe HBT process made it possible to integrate a scaled CMOS without performance degradations. High performance passive elements were also integrated for a large functionality. A 16:1 MUX fabricated in this technology showed a maximum operating clock rate of 54 GHz.

Original languageEnglish
Pages84-87
Number of pages4
Publication statusPublished - 2002 Jan 1
Event2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States
Duration: 2002 Sep 292002 Oct 1

Other

Other2002 IEEE Biopolar/BicMOS and Technology Meeting
CountryUnited States
CityMinneapolis
Period02/9/2902/10/1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wada, S., Nonaka, Y., Saito, T., Tominari, T., Koyu, K., Ikeda, K., Sakai, K., Sasahara, K., Watanabe, K., Fujiwara, H., Murata, F., Ohue, E., Kiyota, Y., Shimamoto, H., Washio, K., Takeyari, R., Hosoe, H., & Hashimoto, T. (2002). A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs. 84-87. Paper presented at 2002 IEEE Biopolar/BicMOS and Technology Meeting, Minneapolis, United States.