Abstract
XeF2 has been proposed as a catalyst for low-temperature dehydration of SiO2 films. The critical dehydration temperature was about 200°C less XeF2 dehydration-annealing than for vacuum dehydration-annealing. The SiO2 film deposited from tetraethylorthosilicate (TEOS) and ozone at 270°C showed OH-free and good insulating characteristics after XeF2-annealing at 400°C.
Original language | English |
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Pages (from-to) | L46-L48 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 40 |
Issue number | 1 A/B |
DOIs | |
Publication status | Published - 2001 Jan 15 |
Externally published | Yes |
Keywords
- Dehydration
- Insulating thin film
- Low-temperature processing
- SiO
- Silicon dioxide
- XeF
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)