A low-temperature dehydration method of silica films

T. Fukumura; S. Sugahara; M. Matsumura

doi:10.1143/jjap.40.l46

A low-temperature dehydration method of silica films

T. Fukumura, S. Sugahara, M. Matsumura

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

XeF₂ has been proposed as a catalyst for low-temperature dehydration of SiO₂ films. The critical dehydration temperature was about 200°C less XeF₂ dehydration-annealing than for vacuum dehydration-annealing. The SiO₂ film deposited from tetraethylorthosilicate (TEOS) and ozone at 270°C showed OH-free and good insulating characteristics after XeF₂-annealing at 400°C.

Original language	English
Pages (from-to)	L46-L48
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	1 A/B
DOIs	https://doi.org/10.1143/jjap.40.l46
Publication status	Published - 2001 Jan 15

Keywords

Dehydration
Insulating thin film
Low-temperature processing
SiO
Silicon dioxide
XeF

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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AU - Sugahara, S.

AU - Matsumura, M.

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N2 - XeF2 has been proposed as a catalyst for low-temperature dehydration of SiO2 films. The critical dehydration temperature was about 200°C less XeF2 dehydration-annealing than for vacuum dehydration-annealing. The SiO2 film deposited from tetraethylorthosilicate (TEOS) and ozone at 270°C showed OH-free and good insulating characteristics after XeF2-annealing at 400°C.

AB - XeF2 has been proposed as a catalyst for low-temperature dehydration of SiO2 films. The critical dehydration temperature was about 200°C less XeF2 dehydration-annealing than for vacuum dehydration-annealing. The SiO2 film deposited from tetraethylorthosilicate (TEOS) and ozone at 270°C showed OH-free and good insulating characteristics after XeF2-annealing at 400°C.

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KW - Low-temperature processing

KW - SiO

KW - Silicon dioxide

KW - XeF

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