A low-temperature and highly reproducible fabrication process for high-mobility solution-processed small molecule field-effect transistors

T. Endo, T. Nagase, T. Kobayashi, K. Takimiya, M. Ikeda, H. Naito

Research output: Contribution to conferencePaperpeer-review

Abstract

A simple, low-temperature, and reproducible fabrication process of dioctylbenzothienobenzothiophene top-gate field-effect transistors has been reported. A total of 116 devices exhibit high mobilities of 1.59±0.40 cm2/Vs, low threshold voltages of -1.48±3.02 V, and excellent electrical stability against a 104-s-duration gate-bias stress of -1.2 MV/cm.

Original languageEnglish
Pages2235-2238
Number of pages4
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 2010 Dec 12010 Dec 3

Other

Other17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period10/12/110/12/3

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

Fingerprint Dive into the research topics of 'A low-temperature and highly reproducible fabrication process for high-mobility solution-processed small molecule field-effect transistors'. Together they form a unique fingerprint.

Cite this