A low quiescent current CV/CC parallel operation HBT power amplifier for W-CDMA terminals

Shintaro Shinjo; Kazutomi Mori; Hiro Omi Ueda; Akira Ohta; Hiroaki Seki; Noriharn Suematsu; Tadashi Takagi

A low quiescent current CV/CC parallel operation HBT power amplifier for W-CDMA terminals

Shintaro Shinjo, Kazutomi Mori, Hiro Omi Ueda, Akira Ohta, Hiroaki Seki, Noriharn Suematsu, Tadashi Takagi

Research output: Contribution to journal › Article › peer-review

Abstract

A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32mA to 23mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (P_out) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.

Original language	English
Pages (from-to)	1444-1450
Number of pages	7
Journal	IEICE Transactions on Electronics
Volume	E86-C
Issue number	8
Publication status	Published - 2003 Aug
Externally published	Yes

Keywords

Heterojunction bipolar transistor (HBT)
Inductor base feed
Microwave
Power amplifier
Resistor base feed

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{9478b92be08c4e09a885bb45f4f6b958,

title = "A low quiescent current CV/CC parallel operation HBT power amplifier for W-CDMA terminals",

abstract = "A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32mA to 23mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (Pout) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.",

keywords = "Heterojunction bipolar transistor (HBT), Inductor base feed, Microwave, Power amplifier, Resistor base feed",

author = "Shintaro Shinjo and Kazutomi Mori and Ueda, {Hiro Omi} and Akira Ohta and Hiroaki Seki and Noriharn Suematsu and Tadashi Takagi",

year = "2003",

month = aug,

language = "English",

volume = "E86-C",

pages = "1444--1450",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "8",

}

TY - JOUR

T1 - A low quiescent current CV/CC parallel operation HBT power amplifier for W-CDMA terminals

AU - Shinjo, Shintaro

AU - Mori, Kazutomi

AU - Ueda, Hiro Omi

AU - Ohta, Akira

AU - Seki, Hiroaki

AU - Suematsu, Noriharn

AU - Takagi, Tadashi

PY - 2003/8

Y1 - 2003/8

N2 - A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32mA to 23mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (Pout) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.

AB - A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32mA to 23mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (Pout) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.

KW - Heterojunction bipolar transistor (HBT)

KW - Inductor base feed

KW - Microwave

KW - Power amplifier

KW - Resistor base feed

UR - http://www.scopus.com/inward/record.url?scp=0142054970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142054970&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0142054970

VL - E86-C

SP - 1444

EP - 1450

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 8

ER -

A low quiescent current CV/CC parallel operation HBT power amplifier for W-CDMA terminals

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this