A low quiescent current CV/CC parallel operation HBT power amplifier for W-CDMA terminals

Shintaro Shinjo, Kazutomi Mori, Hiro Omi Ueda, Akira Ohta, Hiroaki Seki, Noriharn Suematsu, Tadashi Takagi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32mA to 23mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (Pout) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.

Original languageEnglish
Pages (from-to)1444-1450
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE86-C
Issue number8
Publication statusPublished - 2003 Aug
Externally publishedYes

Keywords

  • Heterojunction bipolar transistor (HBT)
  • Inductor base feed
  • Microwave
  • Power amplifier
  • Resistor base feed

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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