TY - GEN
T1 - A low pressure gas ionization sensor using freestanding gold nanowires
AU - Sadeghian, Ramin Banan
AU - Kahrizi, Mojtaba
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Freestanding gold nanowires (AuNWs) were grown by electrochemically filling the nanoscale pores of anodic aluminum oxide (AAO) membranes, and removing the membrane selectively. The array of vertically-aligned AuNWs was used at one of the electrodes of a capacitor-like gas ionizing cell, while the counter electrode was a polished silicon wafer coated with aluminum. The field enhancement property of high aspect-ratio AuNWs was employed to reduce the gaseous breakdown voltage (Vb) at room temperature. The device was operated in low-pressure gas to study the effect of AuNWs on pre-breakdown current, and tested in sub-torr argon, where it demonstrated considerable reduction in the breakdown voltage compared to uniform field conditions. The effect of nanowire polarity on Vb and the pre-breakdown discharge current was also studied.
AB - Freestanding gold nanowires (AuNWs) were grown by electrochemically filling the nanoscale pores of anodic aluminum oxide (AAO) membranes, and removing the membrane selectively. The array of vertically-aligned AuNWs was used at one of the electrodes of a capacitor-like gas ionizing cell, while the counter electrode was a polished silicon wafer coated with aluminum. The field enhancement property of high aspect-ratio AuNWs was employed to reduce the gaseous breakdown voltage (Vb) at room temperature. The device was operated in low-pressure gas to study the effect of AuNWs on pre-breakdown current, and tested in sub-torr argon, where it demonstrated considerable reduction in the breakdown voltage compared to uniform field conditions. The effect of nanowire polarity on Vb and the pre-breakdown discharge current was also studied.
KW - Field enhancement effect
KW - Freestanding gold nanowires
KW - Gas ionization sensor
UR - http://www.scopus.com/inward/record.url?scp=50049093563&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50049093563&partnerID=8YFLogxK
U2 - 10.1109/ISIE.2007.4374803
DO - 10.1109/ISIE.2007.4374803
M3 - Conference contribution
AN - SCOPUS:50049093563
SN - 1424407559
SN - 9781424407552
T3 - IEEE International Symposium on Industrial Electronics
SP - 1387
EP - 1390
BT - 2007 IEEE International Symposium on Industrial Electronics, ISIE 2007, Proceedings
T2 - 2007 IEEE International Symposium on Industrial Electronics, ISIE 2007
Y2 - 4 June 2007 through 7 June 2007
ER -