To realize high-density SRAMs, we developed a four-transistor SRAM cell with a newly developed stacked vertical poly-silicon PMOS. The vertical poly-silicon PMOS has a gate surrounding a body that forms a channel and yields a drive current of 20 μA at 25°C. Vertical poly-silicon PMOSs are used as transfer MOSs and are stacked over the bulk NMOSs, used as driver MOSs, to reduce the size of a four-transistor SRAM cell. As a result, the size of the proposed four-transistor SRAM cell was 38% of that of a six-transistor SRAM cell. We also developed an electric-field-relaxation scheme to reduce cell leakage and a dual-word-voltage scheme to improve cell stability. By applying these two schemes to the proposed four-transistor SRAM cell, we achieved a 90% reduction in cell leakage and an improvement in cell stability.
- CMOS memory circuits
- Low standby leakage
- Vertical MOSFET
ASJC Scopus subject areas
- Electrical and Electronic Engineering