A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance

Koichi Mizobuchi; Satoru Adachi; Jose Tejada; Hiromichi Oshikubo; Nana Akahane; Shigetoshi Sugawa

doi:10.1117/12.765871

A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance

Koichi Mizobuchi, Satoru Adachi, Jose Tejada, Hiromichi Oshikubo, Nana Akahane, Shigetoshi Sugawa

ENG - Management Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A temperature-resistant 1/3 inch SVGA (800×600 pixels) 5.6 μm pixel pitch wide-dynamic-range (WDR) CMOS image sensor has been developed using a lateral-over-flow-integration-capacitor (LOFIC) in a pixel. The sensor chips are fabricated through 0.18 μm 2P3M process with totally optimized front-end-of-line (FEOL) & back-end-of-line (BEOL) for a lower dark current. By implementing a low electrical field potential design for photodiodes, reducing damages, recovering crystal defects and terminating interface states in the FEOL+BEOL, the dark current is improved to 12 e^-/pixel-sec at 60 deg.C with 50 % reduction from the previous very-low-dark-current (VLDC) FEOL and its contribution to the temporal noise is improved. Furthermore, design optimizations of the readout circuits, especially a signal-and-noise-hold circuit and a programmable-gain-amplifier (PGA) are also implemented. The measured temporal noise is 2.4 e^-rms at 60 fps (:36 MHz operation). The dynamic-range (DR) is extended to 100 dB with 237 ke^- full well capacity. In order to secure the temperature-resistance, the sensor chip also receives both an inorganic cap onto micro lens and a metal hermetic seal package assembly. Image samples at low & high temperatures show significant improvement in image qualities.

Original language	English
Title of host publication	Proceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial/Scientific Applications IX
DOIs	https://doi.org/10.1117/12.765871
Publication status	Published - 2008 May 19
Event	Sensors, Cameras, and Systems for Industrial/Scientific Applications IX - San Jose, CA, United States Duration: 2008 Jan 29 → 2008 Jan 31

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6816
ISSN (Print)	0277-786X

Other

Other	Sensors, Cameras, and Systems for Industrial/Scientific Applications IX
Country/Territory	United States
City	San Jose, CA
Period	08/1/29 → 08/1/31

Keywords

Image sensor
Low dark current
Temperature resistant
Wide dynamic range

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.765871

Cite this

Mizobuchi, K., Adachi, S., Tejada, J., Oshikubo, H., Akahane, N., & Sugawa, S. (2008). A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance. In Proceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial/Scientific Applications IX [681604] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6816). https://doi.org/10.1117/12.765871

A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance. / Mizobuchi, Koichi; Adachi, Satoru; Tejada, Jose et al.

Proceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial/Scientific Applications IX. 2008. 681604 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6816).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mizobuchi, K, Adachi, S, Tejada, J, Oshikubo, H, Akahane, N & Sugawa, S 2008, A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance. in Proceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial/Scientific Applications IX., 681604, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6816, Sensors, Cameras, and Systems for Industrial/Scientific Applications IX, San Jose, CA, United States, 08/1/29. https://doi.org/10.1117/12.765871

Mizobuchi K, Adachi S, Tejada J, Oshikubo H, Akahane N, Sugawa S. A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance. In Proceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial/Scientific Applications IX. 2008. 681604. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.765871

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abstract = "A temperature-resistant 1/3 inch SVGA (800×600 pixels) 5.6 μm pixel pitch wide-dynamic-range (WDR) CMOS image sensor has been developed using a lateral-over-flow-integration-capacitor (LOFIC) in a pixel. The sensor chips are fabricated through 0.18 μm 2P3M process with totally optimized front-end-of-line (FEOL) & back-end-of-line (BEOL) for a lower dark current. By implementing a low electrical field potential design for photodiodes, reducing damages, recovering crystal defects and terminating interface states in the FEOL+BEOL, the dark current is improved to 12 e-/pixel-sec at 60 deg.C with 50 % reduction from the previous very-low-dark-current (VLDC) FEOL and its contribution to the temporal noise is improved. Furthermore, design optimizations of the readout circuits, especially a signal-and-noise-hold circuit and a programmable-gain-amplifier (PGA) are also implemented. The measured temporal noise is 2.4 e-rms at 60 fps (:36 MHz operation). The dynamic-range (DR) is extended to 100 dB with 237 ke- full well capacity. In order to secure the temperature-resistance, the sensor chip also receives both an inorganic cap onto micro lens and a metal hermetic seal package assembly. Image samples at low & high temperatures show significant improvement in image qualities.",

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AB - A temperature-resistant 1/3 inch SVGA (800×600 pixels) 5.6 μm pixel pitch wide-dynamic-range (WDR) CMOS image sensor has been developed using a lateral-over-flow-integration-capacitor (LOFIC) in a pixel. The sensor chips are fabricated through 0.18 μm 2P3M process with totally optimized front-end-of-line (FEOL) & back-end-of-line (BEOL) for a lower dark current. By implementing a low electrical field potential design for photodiodes, reducing damages, recovering crystal defects and terminating interface states in the FEOL+BEOL, the dark current is improved to 12 e-/pixel-sec at 60 deg.C with 50 % reduction from the previous very-low-dark-current (VLDC) FEOL and its contribution to the temporal noise is improved. Furthermore, design optimizations of the readout circuits, especially a signal-and-noise-hold circuit and a programmable-gain-amplifier (PGA) are also implemented. The measured temporal noise is 2.4 e-rms at 60 fps (:36 MHz operation). The dynamic-range (DR) is extended to 100 dB with 237 ke- full well capacity. In order to secure the temperature-resistance, the sensor chip also receives both an inorganic cap onto micro lens and a metal hermetic seal package assembly. Image samples at low & high temperatures show significant improvement in image qualities.

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A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance

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