A low-dielectric-constant Sr2Ta1-xNbx 2O7 thin film controlling the crystal orientation on an IrO2 substrate for one-transistor-type ferroelectric memory device

Ichirou Takahashi, Hiroyuki Sakurai, Atsuhiko Yamada, Kiyoshi Funaiwa, Tetsuya Goto, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The compounds of the Sr2Nb2O (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Tai1-xNbx)2O7 (STN) film formation technology, which can be applied to a floating-gate-type ferroelectric random access memory (FFRAM), has been developed. Furthermore, a new technology that controls the orientation and the properties (a low dielectric constant and large coercive field) of STN has been developed. An MFMIS structure device with a large memory bias window (1.3V) under ± 5V operation and a long retention time (>10h) has successfully been fabricated.

Original languageEnglish
Pages (from-to)2194-2198
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - 2004 Apr

Keywords

  • Controlling the orientation
  • Ferroelectric thin film
  • IrO
  • Low dielectric constant
  • MFMIS-FET
  • Plasma physical vapor deposition
  • Sr(Ta,Nb)O (STN)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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