A large output voltage swing of a resonant tunneling flip-flop circuit employing a monostable-bistable transition logic element (MOBILE)

Koichi Maezawa, Hideaki Matsuzaki, Jiro Osaka, Masafumi Yamamoto, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A resonant tunneling flip-flop circuit was fabricated based on a monostable-bistable transition logic element (MOBILE). In this work, an Source Coupled FET Logic (SCFL) type output buffer and depletion-mode High Electron Mobility Transistors (HEMTs) were employed instead of a Direct Coupled FET Logic (DCFL) type buffer and enhancement-mode HEMTs used in previous studies. A practical output voltage level close to the SCFL interface was demonstrated for the first time with a MOBILE circuit operating at a high bit rate of up to 20 Gb/s. This indicates that the MOBILE has sufficient current drivability.

Original languageEnglish
Pages (from-to)L1286-L1287
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number11 PART A
DOIs
Publication statusPublished - 1998 Nov 1
Externally publishedYes

Keywords

  • Flip-flop
  • HEMT
  • InAlAs
  • InGaAs
  • InP
  • Resonant tunneling diode
  • SCFL

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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