A resonant tunneling flip-flop circuit was fabricated based on a monostable-bistable transition logic element (MOBILE). In this work, an Source Coupled FET Logic (SCFL) type output buffer and depletion-mode High Electron Mobility Transistors (HEMTs) were employed instead of a Direct Coupled FET Logic (DCFL) type buffer and enhancement-mode HEMTs used in previous studies. A practical output voltage level close to the SCFL interface was demonstrated for the first time with a MOBILE circuit operating at a high bit rate of up to 20 Gb/s. This indicates that the MOBILE has sufficient current drivability.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||11 PART A|
|Publication status||Published - 1998 Nov 1|
- Resonant tunneling diode
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)