A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Tatsushi Akazaki, Hideaki Takayanagi, Junsaku Nitta, Takatomo Enoki

Research output: Contribution to journalArticlepeer-review

85 Citations (Scopus)

Abstract

A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this provides voltage gain over 1 for a JOFET.

Original languageEnglish
Pages (from-to)418-420
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number3
DOIs
Publication statusPublished - 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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