A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits

Hideo Ohno

A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits

Hideo Ohno

Leadership

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

Magnetic tunnel junction (MTJ), a spintronics device, offers nonvolatile memory capable of fast-read/write with high endurance together with back end of the line (BEOL) compatibility. These features combined with the CMOS technology offer not only a non-volatile, high density, and fast random access memory, but also a possibility of constructing a CMOS logic circuit having unprecedented low power capability and compactness. I describe here the development of MTJ, in particular the giant tunnel magnetoresistance of MgO-barrier MTJ and current-induced magnetization switching, basic hybrid CMOS/MTJ circuits, and prospects of the current approach along with the remaining challenges.

Original language	English
Title of host publication	2009 Symposium on VLSI Technology, VLSIT 2009
Pages	122-123
Number of pages	2
Publication status	Published - 2009 Nov 16
Event	2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan Duration: 2009 Jun 16 → 2009 Jun 18

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2009 Symposium on VLSI Technology, VLSIT 2009
Country/Territory	Japan
City	Kyoto
Period	09/6/16 → 09/6/18

Keywords

Hybrid MTJ/CMOS
Logic-in-memory circuit
MTJ
Nonvolatility
Spintronics

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits",

abstract = "Magnetic tunnel junction (MTJ), a spintronics device, offers nonvolatile memory capable of fast-read/write with high endurance together with back end of the line (BEOL) compatibility. These features combined with the CMOS technology offer not only a non-volatile, high density, and fast random access memory, but also a possibility of constructing a CMOS logic circuit having unprecedented low power capability and compactness. I describe here the development of MTJ, in particular the giant tunnel magnetoresistance of MgO-barrier MTJ and current-induced magnetization switching, basic hybrid CMOS/MTJ circuits, and prospects of the current approach along with the remaining challenges.",

keywords = "Hybrid MTJ/CMOS, Logic-in-memory circuit, MTJ, Nonvolatility, Spintronics",

author = "Hideo Ohno",

year = "2009",

month = nov,

day = "16",

language = "English",

isbn = "9784863480094",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "122--123",

booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",

note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",

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T1 - A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits

AU - Ohno, Hideo

PY - 2009/11/16

Y1 - 2009/11/16

N2 - Magnetic tunnel junction (MTJ), a spintronics device, offers nonvolatile memory capable of fast-read/write with high endurance together with back end of the line (BEOL) compatibility. These features combined with the CMOS technology offer not only a non-volatile, high density, and fast random access memory, but also a possibility of constructing a CMOS logic circuit having unprecedented low power capability and compactness. I describe here the development of MTJ, in particular the giant tunnel magnetoresistance of MgO-barrier MTJ and current-induced magnetization switching, basic hybrid CMOS/MTJ circuits, and prospects of the current approach along with the remaining challenges.

AB - Magnetic tunnel junction (MTJ), a spintronics device, offers nonvolatile memory capable of fast-read/write with high endurance together with back end of the line (BEOL) compatibility. These features combined with the CMOS technology offer not only a non-volatile, high density, and fast random access memory, but also a possibility of constructing a CMOS logic circuit having unprecedented low power capability and compactness. I describe here the development of MTJ, in particular the giant tunnel magnetoresistance of MgO-barrier MTJ and current-induced magnetization switching, basic hybrid CMOS/MTJ circuits, and prospects of the current approach along with the remaining challenges.

KW - Hybrid MTJ/CMOS

KW - Logic-in-memory circuit

KW - MTJ

KW - Nonvolatility

KW - Spintronics

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M3 - Conference contribution

AN - SCOPUS:71049161245

SN - 9784863480094

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 122

EP - 123

BT - 2009 Symposium on VLSI Technology, VLSIT 2009

T2 - 2009 Symposium on VLSI Technology, VLSIT 2009

Y2 - 16 June 2009 through 18 June 2009

ER -

A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

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