A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Magnetic tunnel junction (MTJ), a spintronics device, offers nonvolatile memory capable of fast-read/write with high endurance together with back end of the line (BEOL) compatibility. These features combined with the CMOS technology offer not only a non-volatile, high density, and fast random access memory, but also a possibility of constructing a CMOS logic circuit having unprecedented low power capability and compactness. I describe here the development of MTJ, in particular the giant tunnel magnetoresistance of MgO-barrier MTJ and current-induced magnetization switching, basic hybrid CMOS/MTJ circuits, and prospects of the current approach along with the remaining challenges.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages122-123
Number of pages2
Publication statusPublished - 2009 Nov 16
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period09/6/1609/6/18

Keywords

  • Hybrid MTJ/CMOS
  • Logic-in-memory circuit
  • MTJ
  • Nonvolatility
  • Spintronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Ohno, H. (2009). A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 122-123). [5200657] (Digest of Technical Papers - Symposium on VLSI Technology).