TY - GEN
T1 - A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits
AU - Ohno, Hideo
PY - 2009/11/16
Y1 - 2009/11/16
N2 - Magnetic tunnel junction (MTJ), a spintronics device, offers nonvolatile memory capable of fast-read/write with high endurance together with back end of the line (BEOL) compatibility. These features combined with the CMOS technology offer not only a non-volatile, high density, and fast random access memory, but also a possibility of constructing a CMOS logic circuit having unprecedented low power capability and compactness. I describe here the development of MTJ, in particular the giant tunnel magnetoresistance of MgO-barrier MTJ and current-induced magnetization switching, basic hybrid CMOS/MTJ circuits, and prospects of the current approach along with the remaining challenges.
AB - Magnetic tunnel junction (MTJ), a spintronics device, offers nonvolatile memory capable of fast-read/write with high endurance together with back end of the line (BEOL) compatibility. These features combined with the CMOS technology offer not only a non-volatile, high density, and fast random access memory, but also a possibility of constructing a CMOS logic circuit having unprecedented low power capability and compactness. I describe here the development of MTJ, in particular the giant tunnel magnetoresistance of MgO-barrier MTJ and current-induced magnetization switching, basic hybrid CMOS/MTJ circuits, and prospects of the current approach along with the remaining challenges.
KW - Hybrid MTJ/CMOS
KW - Logic-in-memory circuit
KW - MTJ
KW - Nonvolatility
KW - Spintronics
UR - http://www.scopus.com/inward/record.url?scp=71049161245&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71049161245&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:71049161245
SN - 9784863480094
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 122
EP - 123
BT - 2009 Symposium on VLSI Technology, VLSIT 2009
T2 - 2009 Symposium on VLSI Technology, VLSIT 2009
Y2 - 16 June 2009 through 18 June 2009
ER -