A Highly Ultraviolet Light Sensitive and Highly Robust Image Sensor Technology Based on Flattened Si Surface

Rihito Kuroda, Shun Kawada, Satoshi Nasuno, Taiki Nakazawa, Yasumasa Koda, Katsuhiko Hanzawa, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

In this paper, an ultraviolet light (UV-light) sensitive and highly robust Si photodiode technology based on atomically flattened Si surface is summarized and its application to a CMOS image sensor is demonstrated. By forming a surface high concentration layer of photodiode with steep dopant profile uniformly on flattened Si surface, the almost 100 % internal quantum efficiency to UV-light waveband and negligibly small degradation of photo-sensitivity were achieved for both n+pn and p+np photodiodes. The developed photodiode technology was applied to a 5.6 μm pixel pitch front-side-illuminated CMOS image sensor. The fabricated sensor chip exhibited a spectral response to a wide light waveband of 200-1000 nm, and the sensitivity degradation did not occur after the strong UV-light exposure stress.

Original languageEnglish
Pages (from-to)123-130
Number of pages8
JournalITE Transactions on Media Technology and Applications
Volume2
Issue number2
DOIs
Publication statusPublished - 2014 Jan 1

Keywords

  • CMOS image sensor
  • Photodiode
  • Si surface
  • Ultraviolet light

ASJC Scopus subject areas

  • Signal Processing
  • Media Technology
  • Computer Graphics and Computer-Aided Design

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