A highly reliable barrier dielectric for Cu/SiOC interconnects from Trimethylvinylsilane

Low-k SiC and SiCN etch-stop and Cu barrier dielectrics with a dielectric constant as low as 4.0 was successfully integrated into 90-nm-node Cu and low-k SiOC interconnect technology. The new dielectrics were grown by using a new precursor Trimethylvinylsilane. The performance of the dielectrics was evaluated in terms of electrical, mechanical and thermal properties. The results indicate that the new dielectrics are strong candidates for reducing the effective dielectric constant of 90-nm-node interconnect and beyond with high reliability and without significant changes.