A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation

Woonghee Lee, Nana Akahane, Satoru Adachi, Koichi Mizobuchi, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

We discuss results of the design and operations of a CMOS image sensor with high S/N ratio while keeping wide dynamic range. Readout gains and input-referred noises of the image sensor are improved by actively using a pixel source follower feedback operation. A 1/4-inch 5.6 μm × 5.6 μm pixel VGA color CMOS image sensor with a lateral overflow integration capacitor in pixel in a 0.18 μm 2P3M CMOS process achieves about 1.7 times the gain compared with the case where the feedback operation is not positively used, resulting in a high input-referred conversion gain exceeded 200 μV/e -, a low inputreferred noise below 2 e- without column amplifier and a high full well capacity of about 1.3 × 105 e-.

Original languageEnglish
Title of host publication2007 IEEE Asian Solid-State Circuits Conference, A-SSCC
Pages260-263
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 IEEE Asian Solid-State Circuits Conference, A-SSCC - Jeju, Korea, Republic of
Duration: 2007 Nov 122007 Nov 14

Publication series

Name2007 IEEE Asian Solid-State Circuits Conference, A-SSCC

Other

Other2007 IEEE Asian Solid-State Circuits Conference, A-SSCC
CountryKorea, Republic of
CityJeju
Period07/11/1207/11/14

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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