A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation

Woonghee Lee; Nana Akahane; Satoru Adachi; Koichi Mizobuchi; Shigetoshi Sugawa

doi:10.1109/ASSCC.2007.4425780

A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation

Woonghee Lee, Nana Akahane, Satoru Adachi, Koichi Mizobuchi, Shigetoshi Sugawa

ENG - Management Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

We discuss results of the design and operations of a CMOS image sensor with high S/N ratio while keeping wide dynamic range. Readout gains and input-referred noises of the image sensor are improved by actively using a pixel source follower feedback operation. A 1/4-inch 5.6 μm × 5.6 μm pixel VGA color CMOS image sensor with a lateral overflow integration capacitor in pixel in a 0.18 μm 2P3M CMOS process achieves about 1.7 times the gain compared with the case where the feedback operation is not positively used, resulting in a high input-referred conversion gain exceeded 200 μV/e ^-, a low inputreferred noise below 2 e^- without column amplifier and a high full well capacity of about 1.3 × 10⁵ e^-.

Original language	English
Title of host publication	2007 IEEE Asian Solid-State Circuits Conference, A-SSCC
Pages	260-263
Number of pages	4
DOIs	https://doi.org/10.1109/ASSCC.2007.4425780
Publication status	Published - 2007 Dec 1
Event	2007 IEEE Asian Solid-State Circuits Conference, A-SSCC - Jeju, Korea, Republic of Duration: 2007 Nov 12 → 2007 Nov 14

Publication series

Name	2007 IEEE Asian Solid-State Circuits Conference, A-SSCC

Other

Other	2007 IEEE Asian Solid-State Circuits Conference, A-SSCC
Country/Territory	Korea, Republic of
City	Jeju
Period	07/11/12 → 07/11/14

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ASSCC.2007.4425780

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A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation. / Lee, Woonghee; Akahane, Nana; Adachi, Satoru; Mizobuchi, Koichi; Sugawa, Shigetoshi.

2007 IEEE Asian Solid-State Circuits Conference, A-SSCC. 2007. p. 260-263 4425780 (2007 IEEE Asian Solid-State Circuits Conference, A-SSCC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, W, Akahane, N, Adachi, S, Mizobuchi, K & Sugawa, S 2007, A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation. in 2007 IEEE Asian Solid-State Circuits Conference, A-SSCC., 4425780, 2007 IEEE Asian Solid-State Circuits Conference, A-SSCC, pp. 260-263, 2007 IEEE Asian Solid-State Circuits Conference, A-SSCC, Jeju, Korea, Republic of, 07/11/12. https://doi.org/10.1109/ASSCC.2007.4425780

@inproceedings{f1781fbebfcf46e9a73431d3a8a85dc4,

title = "A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation",

abstract = "We discuss results of the design and operations of a CMOS image sensor with high S/N ratio while keeping wide dynamic range. Readout gains and input-referred noises of the image sensor are improved by actively using a pixel source follower feedback operation. A 1/4-inch 5.6 μm × 5.6 μm pixel VGA color CMOS image sensor with a lateral overflow integration capacitor in pixel in a 0.18 μm 2P3M CMOS process achieves about 1.7 times the gain compared with the case where the feedback operation is not positively used, resulting in a high input-referred conversion gain exceeded 200 μV/e -, a low inputreferred noise below 2 e- without column amplifier and a high full well capacity of about 1.3 × 105 e-.",

author = "Woonghee Lee and Nana Akahane and Satoru Adachi and Koichi Mizobuchi and Shigetoshi Sugawa",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ASSCC.2007.4425780",

language = "English",

isbn = "1424413605",

series = "2007 IEEE Asian Solid-State Circuits Conference, A-SSCC",

pages = "260--263",

booktitle = "2007 IEEE Asian Solid-State Circuits Conference, A-SSCC",

note = "2007 IEEE Asian Solid-State Circuits Conference, A-SSCC ; Conference date: 12-11-2007 Through 14-11-2007",

}

TY - GEN

T1 - A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation

AU - Lee, Woonghee

AU - Akahane, Nana

AU - Adachi, Satoru

AU - Mizobuchi, Koichi

AU - Sugawa, Shigetoshi

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We discuss results of the design and operations of a CMOS image sensor with high S/N ratio while keeping wide dynamic range. Readout gains and input-referred noises of the image sensor are improved by actively using a pixel source follower feedback operation. A 1/4-inch 5.6 μm × 5.6 μm pixel VGA color CMOS image sensor with a lateral overflow integration capacitor in pixel in a 0.18 μm 2P3M CMOS process achieves about 1.7 times the gain compared with the case where the feedback operation is not positively used, resulting in a high input-referred conversion gain exceeded 200 μV/e -, a low inputreferred noise below 2 e- without column amplifier and a high full well capacity of about 1.3 × 105 e-.

AB - We discuss results of the design and operations of a CMOS image sensor with high S/N ratio while keeping wide dynamic range. Readout gains and input-referred noises of the image sensor are improved by actively using a pixel source follower feedback operation. A 1/4-inch 5.6 μm × 5.6 μm pixel VGA color CMOS image sensor with a lateral overflow integration capacitor in pixel in a 0.18 μm 2P3M CMOS process achieves about 1.7 times the gain compared with the case where the feedback operation is not positively used, resulting in a high input-referred conversion gain exceeded 200 μV/e -, a low inputreferred noise below 2 e- without column amplifier and a high full well capacity of about 1.3 × 105 e-.

UR - http://www.scopus.com/inward/record.url?scp=46749086772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46749086772&partnerID=8YFLogxK

U2 - 10.1109/ASSCC.2007.4425780

DO - 10.1109/ASSCC.2007.4425780

M3 - Conference contribution

AN - SCOPUS:46749086772

SN - 1424413605

SN - 9781424413607

T3 - 2007 IEEE Asian Solid-State Circuits Conference, A-SSCC

SP - 260

EP - 263

BT - 2007 IEEE Asian Solid-State Circuits Conference, A-SSCC

T2 - 2007 IEEE Asian Solid-State Circuits Conference, A-SSCC

Y2 - 12 November 2007 through 14 November 2007

ER -

A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation

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