A high-resolution electron microscopy study of vanadium deposited on the basal plane of sapphire

Y. Ikuhara, P. Pirouz

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    20 Citations (Scopus)

    Abstract

    The interface between vanadium and the basal plane of sapphire was studied by conventional and cross sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface. A 50 nm thick vanadium film was deposited on the (0001) basal plane of sapphire by molecular beam epitaxy (MBE). The TEM observations of the interface were made from three directions: two cross-sectional views (parallel to [1210]Al2O3 and [1010]Al2O3) and plan view (parallel to [0001]Al2O3). From the SADP, the following orientation relationship was obtained: (111)V {norm of matrix}(0001)Al2O3; [101V {norm of matrix}[1210]Al2O3. Cross-sectional HREM observations showed the atomic configuration at the interface, and the existence of periodic arrays of geometrical misfit dislocations. Computer simulations show that sapphire is aluminum-terminated at the interface with vanadium.

    Original languageEnglish
    Pages (from-to)421-428
    Number of pages8
    JournalUltramicroscopy
    Volume52
    Issue number3-4
    DOIs
    Publication statusPublished - 1993 Dec

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Instrumentation

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