A high random-access-data-rate 4MbDRAM with pipeline operation

Tohru Furuyama, Natsuki Kushiyama, Yohji Watanabe, Takashi Ohsawa, Kazuyoshi Muraoka, Yousei Nagahama

    Research output: Contribution to conferencePaperpeer-review

    3 Citations (Scopus)

    Abstract

    A novel circuit technology which introduces a pipeline scheme in a read operation and improves the random-access data rate by roughly 30% is described. This technology has been applied to a 4M DRAM, and the RAM showed a short cycle time of less than 100 ns, i.e., a more than 10-MHz data rate, under the worst operating condition. In addition, a very fast virtual RAS access time of 20 ns has been obtained. Since the pipeline DRAM does not require any new process and/or assembly technologies, it can be added to the standard DRAM family.

    Original languageEnglish
    Pages9-10
    Number of pages2
    DOIs
    Publication statusPublished - 1990 Jan 1
    Event1990 Symposium on VLSI Circuits - Honolulu, HI, USA
    Duration: 1990 Jun 71990 Jun 9

    Other

    Other1990 Symposium on VLSI Circuits
    CityHonolulu, HI, USA
    Period90/6/790/6/9

    ASJC Scopus subject areas

    • Engineering(all)

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