A high-precision current measurement platform applied for statistical measurement of discharge current transient spectroscopy of traps in SiN dielectrics

Koga Saito, Hayato Suzuki, Hyeonwoo Park, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a current measurement platform to measure current across dielectrics with a high-precision of 10-17 A from a large number of small capacitors at high speed. The developed platform consists of a common readout circuit part and a dielectric part formed on the circuit part by a simple process. A platform chip with 10 μm pitch 384H × 360V cells was fabricated using a 0.18 μm CMOS technology and silicon nitride (SiN) films were formed by plasma-enhanced CVD (PECVD) as a measurement target. The trap property of SiN films in metal–insulator–metal (MIM) capacitors was statistically measured by discharge current transient spectroscopy (DCTS) using the developed platform. The measured average energy levels of traps (Ec–Et) were 0.21–0.25 eV, which is in good agreement with that of the discrete samples. The distributions of energy levels and densities of traps measured with different film thicknesses and areas are also presented and discussed.

Original languageEnglish
Article number086501
JournalJapanese journal of applied physics
Volume60
Issue number8
DOIs
Publication statusPublished - 2021 Aug

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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