A high-precision 1 Ω-10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa

Research output: Contribution to journalArticle

Abstract

We developed an accuracy improved resistance measurement platform for statistical evaluation of emerging memory materials. The developed platform excludes on-resistance of selectors (R ON), resulting in high measurement accuracy with a measurement error of 10% or less across the measurement range of 1 Ω-10 MΩ. The developed platform can accurately measure the resistance of various memory materials on a large scale of 360 000 cells within 50 ms. Various memory materials can be tested only by forming them on top of the platform. The circuit operation was verified, and the effect of R ON exclusion was confirmed using 6000 Poly-Si cells.

Original languageEnglish
Article numberSGGL03
JournalJapanese journal of applied physics
Volume59
Issue numberSG
DOIs
Publication statusPublished - 2020 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'A high-precision 1 Ω-10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials'. Together they form a unique fingerprint.

  • Cite this