A high-precision 1 Ω-10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

Takeru Maeda; Yuya Omura; Rihito Kuroda; Akinobu Teramoto; Tomoyuki Suwa; Shigetoshi Sugawa

doi:10.35848/1347-4065/ab6d86

A high-precision 1 Ω-10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa

Research output: Contribution to journal › Article

Abstract

We developed an accuracy improved resistance measurement platform for statistical evaluation of emerging memory materials. The developed platform excludes on-resistance of selectors (R _ON), resulting in high measurement accuracy with a measurement error of 10% or less across the measurement range of 1 Ω-10 MΩ. The developed platform can accurately measure the resistance of various memory materials on a large scale of 360 000 cells within 50 ms. Various memory materials can be tested only by forming them on top of the platform. The circuit operation was verified, and the effect of R _ON exclusion was confirmed using 6000 Poly-Si cells.

Original language	English
Article number	SGGL03
Journal	Japanese journal of applied physics
Volume	59
Issue number	SG
DOIs	https://doi.org/10.35848/1347-4065/ab6d86
Publication status	Published - 2020 Apr 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Maeda, T., Omura, Y., Kuroda, R., Teramoto, A., Suwa, T., & Sugawa, S. (2020). A high-precision 1 Ω-10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials. Japanese journal of applied physics, 59(SG), [SGGL03]. https://doi.org/10.35848/1347-4065/ab6d86

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