TY - JOUR
T1 - A high-precision 1 Ω-10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials
AU - Maeda, Takeru
AU - Omura, Yuya
AU - Kuroda, Rihito
AU - Teramoto, Akinobu
AU - Suwa, Tomoyuki
AU - Sugawa, Shigetoshi
N1 - Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/4/1
Y1 - 2020/4/1
N2 - We developed an accuracy improved resistance measurement platform for statistical evaluation of emerging memory materials. The developed platform excludes on-resistance of selectors (R ON), resulting in high measurement accuracy with a measurement error of 10% or less across the measurement range of 1 Ω-10 MΩ. The developed platform can accurately measure the resistance of various memory materials on a large scale of 360 000 cells within 50 ms. Various memory materials can be tested only by forming them on top of the platform. The circuit operation was verified, and the effect of R ON exclusion was confirmed using 6000 Poly-Si cells.
AB - We developed an accuracy improved resistance measurement platform for statistical evaluation of emerging memory materials. The developed platform excludes on-resistance of selectors (R ON), resulting in high measurement accuracy with a measurement error of 10% or less across the measurement range of 1 Ω-10 MΩ. The developed platform can accurately measure the resistance of various memory materials on a large scale of 360 000 cells within 50 ms. Various memory materials can be tested only by forming them on top of the platform. The circuit operation was verified, and the effect of R ON exclusion was confirmed using 6000 Poly-Si cells.
UR - http://www.scopus.com/inward/record.url?scp=85083290258&partnerID=8YFLogxK
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U2 - 10.35848/1347-4065/ab6d86
DO - 10.35848/1347-4065/ab6d86
M3 - Article
AN - SCOPUS:85083290258
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SG
M1 - SGGL03
ER -