A High-Performance SiGe HBT/BiCMOS Technology

Shinichiro Wada, Takashi Hashimoto, Hideyuki Hosoe, Katsuyoshi Washio

Research output: Contribution to journalArticle

Abstract

A high-performance SiGe HBT/BiCMOS technology is reviewed. A nanometer scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.

Original languageEnglish
Pages (from-to)284-288
Number of pages5
JournalIEEJ Transactions on Electronics, Information and Systems
Volume124
Issue number2
DOIs
Publication statusPublished - 2004 Jan
Externally publishedYes

Keywords

  • BiCMOS
  • Heterojunction Bipolar Transistor
  • SiGe HBT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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