A High-Performance SiGe HBT/BiCMOS Technology

Shinichiro Wada; Takashi Hashimoto; Hideyuki Hosoe; Katsuyoshi Washio

doi:10.1541/ieejeiss.124.284

A High-Performance SiGe HBT/BiCMOS Technology

Shinichiro Wada, Takashi Hashimoto, Hideyuki Hosoe, Katsuyoshi Washio

Research output: Contribution to journal › Article

Abstract

A high-performance SiGe HBT/BiCMOS technology is reviewed. A nanometer scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.

Original language	English
Pages (from-to)	284-288
Number of pages	5
Journal	IEEJ Transactions on Electronics, Information and Systems
Volume	124
Issue number	2
DOIs	https://doi.org/10.1541/ieejeiss.124.284
Publication status	Published - 2004 Jan
Externally published	Yes

Keywords

BiCMOS
Heterojunction Bipolar Transistor
SiGe HBT

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Wada, S., Hashimoto, T., Hosoe, H., & Washio, K. (2004). A High-Performance SiGe HBT/BiCMOS Technology. IEEJ Transactions on Electronics, Information and Systems, 124(2), 284-288. https://doi.org/10.1541/ieejeiss.124.284

@article{b88f3cceaa784166b218c247c11c5cfd,

title = "A High-Performance SiGe HBT/BiCMOS Technology",

abstract = "A high-performance SiGe HBT/BiCMOS technology is reviewed. A nanometer scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.",

keywords = "BiCMOS, Heterojunction Bipolar Transistor, SiGe HBT",

author = "Shinichiro Wada and Takashi Hashimoto and Hideyuki Hosoe and Katsuyoshi Washio",

year = "2004",

month = jan,

doi = "10.1541/ieejeiss.124.284",

language = "English",

volume = "124",

pages = "284--288",

journal = "IEEJ Transactions on Electronics, Information and Systems",

issn = "0385-4221",

publisher = "The Institute of Electrical Engineers of Japan",

number = "2",

}

TY - JOUR

T1 - A High-Performance SiGe HBT/BiCMOS Technology

AU - Wada, Shinichiro

AU - Hashimoto, Takashi

AU - Hosoe, Hideyuki

AU - Washio, Katsuyoshi

PY - 2004/1

Y1 - 2004/1

N2 - A high-performance SiGe HBT/BiCMOS technology is reviewed. A nanometer scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.

AB - A high-performance SiGe HBT/BiCMOS technology is reviewed. A nanometer scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.

KW - BiCMOS

KW - Heterojunction Bipolar Transistor

KW - SiGe HBT

UR - http://www.scopus.com/inward/record.url?scp=85024751003&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85024751003&partnerID=8YFLogxK

U2 - 10.1541/ieejeiss.124.284

DO - 10.1541/ieejeiss.124.284

M3 - Article

AN - SCOPUS:85024751003

VL - 124

SP - 284

EP - 288

JO - IEEJ Transactions on Electronics, Information and Systems

JF - IEEJ Transactions on Electronics, Information and Systems

SN - 0385-4221

IS - 2

ER -