A high-performance SiGe HBT/BiCMOS technology is reviewed. A nanometer scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.
|Number of pages||5|
|Journal||IEEJ Transactions on Electronics, Information and Systems|
|Publication status||Published - 2004 Jan|
- Heterojunction Bipolar Transistor
- SiGe HBT
ASJC Scopus subject areas
- Electrical and Electronic Engineering