A High-Performance SiGe HBT/BiCMOS Technology

Shinichiro Wada; Takashi Hashimoto; Hideyuki Hosoe; Katsuyoshi Washio

doi:10.1541/ieejeiss.124.284

A High-Performance SiGe HBT/BiCMOS Technology

Shinichiro Wada, Takashi Hashimoto, Hideyuki Hosoe, Katsuyoshi Washio

Research output: Contribution to journal › Article › peer-review

Abstract

A high-performance SiGe HBT/BiCMOS technology is reviewed. A nanometer scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.

Original language	English
Pages (from-to)	284-288
Number of pages	5
Journal	IEEJ Transactions on Electronics, Information and Systems
Volume	124
Issue number	2
DOIs	https://doi.org/10.1541/ieejeiss.124.284
Publication status	Published - 2004 Jan
Externally published	Yes

Keywords

BiCMOS
Heterojunction Bipolar Transistor
SiGe HBT

ASJC Scopus subject areas

Electrical and Electronic Engineering

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AU - Wada, Shinichiro

AU - Hashimoto, Takashi

AU - Hosoe, Hideyuki

AU - Washio, Katsuyoshi

PY - 2004/1

Y1 - 2004/1

N2 - A high-performance SiGe HBT/BiCMOS technology is reviewed. A nanometer scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.

AB - A high-performance SiGe HBT/BiCMOS technology is reviewed. A nanometer scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.

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KW - Heterojunction Bipolar Transistor

KW - SiGe HBT

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A High-Performance SiGe HBT/BiCMOS Technology

Abstract

Keywords

ASJC Scopus subject areas

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