A high performance current latch sense amplifier with vertical MOSFET

Hyoungjun Na, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this paper, a high performance current latch sense amplifier (CLSA) with vertical MOSFET is proposed, and its performances are investigated. The proposed CLSA with the vertical MOSFET realizes a 11% faster sensing time with about 3% smaller current consumption relative to the conventional CLSA with the planar MOSFET. Moreover, the proposed CLSA with the vertical MOSFET achieves an 1.11 dB increased voltage gain G(f) relative to the conventional CLSA with the planar MOSFET. Furthermore, the proposed CLSA realizes up to about 1.7% larger yield than the conventional CLSA, and its circuit area is 42% smaller than the conventional CLSA.

Original languageEnglish
Pages (from-to)655-662
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE96-C
Issue number5
DOIs
Publication statusPublished - 2013 May

Keywords

  • Circuit area
  • Current
  • Current latch sense amplifier
  • SRAM
  • Sensing time
  • Speed
  • Stability
  • Vertical MOSFET
  • Voltage gain
  • Yield

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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