@inproceedings{925e49a0b93b4eb8b3a6c1f51ff6ded5,
title = "A high mobility field-effect transistor as an antenna for sub-THz radiation",
abstract = "The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency is related to the layout of contact electrodes - that play a role of an antenna. Our results show that the antenna coupling efficiency is one of the most important parameter to optimize in future field effect transistor based terahertz detectors.",
keywords = "Antenna, Detection, Field effect transistor, THz",
author = "M. Sakowicz and J. {\L}usakowski and K. Karpierz and M. Grynberg and W. Gwarek and S. Boubanga and D. Coquillat and W. Knap and A. Shchepetov and S. Bollaert",
year = "2009",
doi = "10.1063/1.3295528",
language = "English",
isbn = "9780735407367",
series = "AIP Conference Proceedings",
pages = "503--504",
booktitle = "Physics of Semiconductors - 29th International Conference, ICPS 29",
note = "29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 27-07-2008 Through 01-08-2008",
}