A high mobility field-effect transistor as an antenna for sub-THz radiation

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Gwarek, S. Boubanga, D. Coquillat, W. Knap, A. Shchepetov, S. Bollaert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency is related to the layout of contact electrodes - that play a role of an antenna. Our results show that the antenna coupling efficiency is one of the most important parameter to optimize in future field effect transistor based terahertz detectors.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages503-504
Number of pages2
DOIs
Publication statusPublished - 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 2008 Jul 272008 Aug 1

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period08/7/2708/8/1

Keywords

  • Antenna
  • Detection
  • Field effect transistor
  • THz

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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