A high efficient, low power, and compact charge pump by vertical MOSFETs

Koji Sakui, Tetsuo Endoh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This paper examines the impact on the charge pump performance by utilizing the merit of the back-bias effect free for the vertical MOSFETs. The simulation results show that the charge pump circuits composed of the vertical MOSFETs can both shrink the charge pump area and lower the power consumption by more than 90% in comparison with the conventional charge pump circuits composed of the planar MOSFETs.

Original languageEnglish
Pages (from-to)1192-1196
Number of pages5
JournalSolid-State Electronics
Volume54
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Keywords

  • Back-bias effect
  • Charge pump
  • MOSFET
  • Pillar
  • Vertical

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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