A high-density ternary content-addressable memory using single-electron transistors

Katsuhiko Degawa, Takafumi Aoki, Hiroshi Inokawa, Katsuhiko Nishiguchi, Tatsuo Higuchi, Yasuo Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a circuit design of a Ternary Content-Addressable Memory (TCAM) using Single-Electron Transistors (SETs). The proposed TCAM cell employs a SET-based ternary memory and a dual-gate SET for ternary data matching. The multi-level functionality of SET is fully utilized to reduce circuit complexity. Basic matching operation of the TCAM cell is verified using a multi-gate SET and a MOSFET fabricated on the same Silicon-On-Insulator (SOI) wafer by Pattern-Dependent OXidation (PADOX) process.

Original languageEnglish
Title of host publication36th International Symposium on Multiple-Valued Logic, 2006. ISMVL 2006
Number of pages1
DOIs
Publication statusPublished - 2006 Nov 21
Event36th International Symposium on Multiple-Valued Logic, 2006. ISMVL 2006 - Singapore, Singapore
Duration: 2006 May 172006 May 20

Publication series

NameProceedings of The International Symposium on Multiple-Valued Logic
ISSN (Print)0195-623X

Other

Other36th International Symposium on Multiple-Valued Logic, 2006. ISMVL 2006
CountrySingapore
CitySingapore
Period06/5/1706/5/20

ASJC Scopus subject areas

  • Computer Science(all)
  • Mathematics(all)

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