A heterojunction bipolar transistor with an epitaxially regrown emitter

T. Tanoue; H. Masuda; K. Washio; T. Nakamura

doi:10.1109/IEDM.1992.307315

A heterojunction bipolar transistor with an epitaxially regrown emitter

T. Tanoue, H. Masuda, K. Washio, T. Nakamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.

Original language	English
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	87-90
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307315
Publication status	Published - 1992 Jan 1
Externally published	Yes
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: 1992 Dec 13 → 1992 Dec 16

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country	United States
City	San Francisco
Period	92/12/13 → 92/12/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.1992.307315

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Tanoue, T., Masuda, H., Washio, K., & Nakamura, T. (1992). A heterojunction bipolar transistor with an epitaxially regrown emitter. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 87-90). [307315] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307315

A heterojunction bipolar transistor with an epitaxially regrown emitter. / Tanoue, T.; Masuda, H.; Washio, K.; Nakamura, T.

1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 87-90 307315 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanoue, T, Masuda, H, Washio, K & Nakamura, T 1992, A heterojunction bipolar transistor with an epitaxially regrown emitter. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307315, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 87-90, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 92/12/13. https://doi.org/10.1109/IEDM.1992.307315

Tanoue T, Masuda H, Washio K, Nakamura T. A heterojunction bipolar transistor with an epitaxially regrown emitter. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 87-90. 307315. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1992.307315

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abstract = "We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.",

author = "T. Tanoue and H. Masuda and K. Washio and T. Nakamura",

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doi = "10.1109/IEDM.1992.307315",

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AB - We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.

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Y2 - 13 December 1992 through 16 December 1992

ER -

A heterojunction bipolar transistor with an epitaxially regrown emitter

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