A heterojunction bipolar transistor with an epitaxially regrown emitter

T. Tanoue; H. Masuda; K. Washio; T. Nakamura

doi:10.1109/IEDM.1992.307315

A heterojunction bipolar transistor with an epitaxially regrown emitter

T. Tanoue, H. Masuda, K. Washio, T. Nakamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.

Original language	English
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	87-90
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307315
Publication status	Published - 1992
Externally published	Yes
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: 1992 Dec 13 → 1992 Dec 16

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/Territory	United States
City	San Francisco
Period	92/12/13 → 92/12/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.1992.307315

Cite this

Tanoue, T., Masuda, H., Washio, K., & Nakamura, T. (1992). A heterojunction bipolar transistor with an epitaxially regrown emitter. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 87-90). [307315] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307315

A heterojunction bipolar transistor with an epitaxially regrown emitter. / Tanoue, T.; Masuda, H.; Washio, K.; Nakamura, T.

1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 87-90 307315 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanoue, T, Masuda, H, Washio, K & Nakamura, T 1992, A heterojunction bipolar transistor with an epitaxially regrown emitter. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307315, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 87-90, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 92/12/13. https://doi.org/10.1109/IEDM.1992.307315

Tanoue T, Masuda H, Washio K, Nakamura T. A heterojunction bipolar transistor with an epitaxially regrown emitter. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 87-90. 307315. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1992.307315

@inproceedings{779fd50c575a408ab432540768c51eae,

title = "A heterojunction bipolar transistor with an epitaxially regrown emitter",

abstract = "We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.",

author = "T. Tanoue and H. Masuda and K. Washio and T. Nakamura",

note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 ; Conference date: 13-12-1992 Through 16-12-1992",

year = "1992",

doi = "10.1109/IEDM.1992.307315",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "87--90",

booktitle = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992",

}

TY - GEN

T1 - A heterojunction bipolar transistor with an epitaxially regrown emitter

AU - Tanoue, T.

AU - Masuda, H.

AU - Washio, K.

AU - Nakamura, T.

PY - 1992

Y1 - 1992

N2 - We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.

AB - We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.

UR - http://www.scopus.com/inward/record.url?scp=84919249865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84919249865&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1992.307315

DO - 10.1109/IEDM.1992.307315

M3 - Conference contribution

AN - SCOPUS:84919249865

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 87

EP - 90

BT - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992

Y2 - 13 December 1992 through 16 December 1992

ER -

A heterojunction bipolar transistor with an epitaxially regrown emitter

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this