TY - GEN
T1 - A heterojunction bipolar transistor with an epitaxially regrown emitter
AU - Tanoue, T.
AU - Masuda, H.
AU - Washio, K.
AU - Nakamura, T.
N1 - Publisher Copyright:
© 1992 IEEE.
PY - 1992
Y1 - 1992
N2 - We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.
AB - We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.
UR - http://www.scopus.com/inward/record.url?scp=84919249865&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84919249865&partnerID=8YFLogxK
U2 - 10.1109/IEDM.1992.307315
DO - 10.1109/IEDM.1992.307315
M3 - Conference contribution
AN - SCOPUS:84919249865
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 87
EP - 90
BT - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Y2 - 13 December 1992 through 16 December 1992
ER -