A global shutter wide dynamic range soft X-ray CMOS image sensor with BSI pinned photodiode, two-stage LOFIC and voltage domain memory bank

H. Shike, R. Kuroda, R. Kobayashi, M. Murata, Y. Fujihara, M. Suzuki, T. Shibaguchi, N. Kuriyama, J. Miyawaki, T. Harada, Y. Yamasaki, T. Watanabe, Y. Harada, S. Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A prototype 22.4μm pixel pitch global shutter wide dynamic range soft X-ray CMOS image sensor (sxCMOS) is presented. The sxCMOS employs backside-illuminated (BSI) pinned photodiode with a 45μm-thick Si substrate for low noise and high light resistance to high energy photons, two-stage LOFIC for wide dynamic range and voltage domain memory bank with high density capacitors for global shutter. The developed chip successfully demonstrated a high quantum efficiency (QE) toward soft X-ray with a single exposure 129dB dynamic range by global shutter.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16.4.1-16.4.4
ISBN (Electronic)9781728188881
DOIs
Publication statusPublished - 2020 Dec 12
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 2020 Dec 122020 Dec 18

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/TerritoryUnited States
CityVirtual, San Francisco
Period20/12/1220/12/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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