A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor with Backside-Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

Hiroya Shike, Rihito Kuroda, Ryota Kobayashi, Maasa Murata, Yasuyuki Fujihara, Manabu Suzuki, Shoma Harada, Taku Shibaguchi, Naoya Kuriyama, Takaki Hatsui, Jun Miyawaki, Tetsuo Harada, Yuichi Yamasaki, Takeo Watanabe, Yoshihisa Harada, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

Abstract

This article presents a prototype 22.4~mu text{m} pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45-mu text{m} thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bank with high-density Si trench capacitors were introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me- full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers.

Original languageEnglish
Article number9378940
Pages (from-to)2056-2063
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume68
Issue number4
DOIs
Publication statusPublished - 2021 Apr

Keywords

  • Backside-illuminated (BSI)
  • CMOS image sensor (CIS)
  • coherent X-ray diffraction imaging (CDI)
  • global shutter (GS)
  • lateral overflow integration capacitor (LOFIC)
  • soft X-ray
  • wide dynamic range (WDR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor with Backside-Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank'. Together they form a unique fingerprint.

Cite this