A global-shutter CMOS image sensor with readout speed of 1Tpixel/s burst and 780Mpixel/s continuous

Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Citations (Scopus)

Abstract

Researchers in many advanced R&D and scientific instrumentation fields must analyze high-speed phenomena through the use of high-speed video cameras with over 1Mfps. Conventional image sensors are mainly rolling-shutter continuous CMOS image sensors that repeat exposure and read-out signals quickly for every frame [1]. A global shutter is a necessity in this field because objects move very fast. Recently, global shutter CMOS image sensors with column-parallel ADCs [2] or analog parallel-output circuits [3] have been reported. A higher frame rate can be achieved by reducing the number of pixels. Consequently, the read-out speed, namely the frame rate times the number of pixels, is limited at around 10Gpixel/s in the conventional global-shutter CMOS image sensors. To improve the read-out speed, global-shutter burst CCD image sensors with multiple storage CCD memories for storing image signals near the photodiode in each pixel have been reported [4]. The image sensor in [4] achieves 1Tpixel/s; however it has issues such as high heat generation due to driving large CCD capacitors simultaneously, an inability to achieve continuous operation, and a decrease of charge capacity at near-maximum frame rates. A prototype global-shutter CMOS image sensor that has multiple on-chip memories is reported in [5]. This sensor achieves both 23Gpixel/s burst operation without cooling and 23Mpixel/s continuous operation on a single chip. This paper presents a 400 Hx256 V pixel CMOS image sensor including 128 on-chip memory/pixel with 1Tpixel/s in burst operation without cooling and 780Mpixel/s in continuous operation. To improve the read-out speed from the chip, a noise-reduction circuit in pixel and relay buffers is introduced.

Original languageEnglish
Title of host publication2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages382-383
Number of pages2
DOIs
Publication statusPublished - 2012 May 11
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: 2012 Feb 192012 Feb 23

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume55
ISSN (Print)0193-6530

Other

Other59th International Solid-State Circuits Conference, ISSCC 2012
CountryUnited States
CitySan Francisco, CA
Period12/2/1912/2/23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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