A global-shutter CMOS image sensor with readout speed of 1-tpixel/s burst and 780-mpixel/s continuous

Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)

Abstract

A 400H× 256Vpixels global-shutter high-speed CMOS image sensor including 128 on-chip memories/pixel has been fabricated in a 0.18-μm 2P4M CMOS with pinned photodiode process. The key technologies of this image sensor are as follows: multiple on-chip memories for each pixel, spatial separation of pixel and on-chip memory regions, multiple pixel output wires for each column, in-pixel noise reduction circuits, in-pixel source-follower current-sources and flexibly selectable on-chip memories. This CMOS image sensor achieves 1 Tpixel/s burst video operation, a full resolution of 10 Mfps with 128 frames and a half resolution of 20 Mfps with 256 frames, and 780 Mpixel/s continuous video operation on the same chip. The power consumption at 1 Tpixel/s was 24 W, while the image sensor operates without active cooling.

Original languageEnglish
Article number6336800
Pages (from-to)329-338
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume48
Issue number1
DOIs
Publication statusPublished - 2013 Jan 1

Keywords

  • Burst video capturing
  • continuous video capturing
  • high-speed CMOS image sensor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A global-shutter CMOS image sensor with readout speed of 1-tpixel/s burst and 780-mpixel/s continuous'. Together they form a unique fingerprint.

Cite this