We report electron transport measurements of a silicon double dot formed in multigated metal-oxide-semiconductor structures with a 15-nm -thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)