A gate-defined silicon quantum dot molecule

Hongwu Liu, Toshimasa Fujisawa, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


We report electron transport measurements of a silicon double dot formed in multigated metal-oxide-semiconductor structures with a 15-nm -thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.

Original languageEnglish
Article number222104
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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