A GaN electromechanical tunable grating on Si substrate

Hidehisa Sameshima, Takuma Tanae, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

An electromechanical tunable grating was fabricated by micromachining a GaN crystal grown on a Si substrate. The tunable grating consisted of an expandable freestanding grating and an electrostatic comb-drive actuator. In order to compensate the residual stress of the GaN crystal grown on the Si substrate, crystallization stress of an HfO2 layer deposited on the GaN crystal was utilized. The freestanding GaN structure of the grating was fabricated by etching the Si substrate with XeF2 gas. The freestanding grating consisted of twenty-four 12-μm-long and 85-nm-wide grating lines with a 720-nm period. By applying a voltage of 140 V, the grating was expanded by 0.6 μ m to change the period by 3.5%. The proposed tunable grating can be used for monolithic integration of a GaN light source and a micro-spectrometer.

Original languageEnglish
Article number5677427
Pages (from-to)281-283
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number5
DOIs
Publication statusPublished - 2011 Feb 25

Keywords

  • Microelectromechanical devices
  • optical device fabrication
  • optical grating
  • tunable filters

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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