A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction

Sumio Ikegawa, Yoshiaki Asao, Yoshiaki Saito, Shigeki Takahashi, Tadashi Kai, Kenji Tsuchida, Hiroaki Yoda

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A 1 kb magnetoresistive random access memory (MRAM) is demonstrated with a 0.4 × 1.2μm2 magnetic tunnel junction (MTJ) and 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology. In this study, a double MTJ, which is designed to have a larger signal margin than a conventional MTJ, is used. The uniformity of resistance for a double MTJ is comparable to that of a single MTJ and is expected to be better than a single MTJ if process conditions are optimized. The magnetic design of the MTJ provided a good astroid curve and resulted in 90% of bits working towards a relatively broad range of bit-line voltage and word-line voltage.

Original languageEnglish
Pages (from-to)L745-L747
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number7 A
DOIs
Publication statusPublished - 2003 Jul 1

Keywords

  • CMOS
  • Double junction
  • MRAM
  • Magnetic tunnel junction
  • Memory
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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