Abstract
A 1 kb magnetoresistive random access memory (MRAM) is demonstrated with a 0.4 × 1.2μm2 magnetic tunnel junction (MTJ) and 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology. In this study, a double MTJ, which is designed to have a larger signal margin than a conventional MTJ, is used. The uniformity of resistance for a double MTJ is comparable to that of a single MTJ and is expected to be better than a single MTJ if process conditions are optimized. The magnetic design of the MTJ provided a good astroid curve and resulted in 90% of bits working towards a relatively broad range of bit-line voltage and word-line voltage.
| Original language | English |
|---|---|
| Pages (from-to) | L745-L747 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 42 |
| Issue number | 7 A |
| DOIs | |
| Publication status | Published - 2003 Jul 1 |
Keywords
- CMOS
- Double junction
- MRAM
- Magnetic tunnel junction
- Memory
- Tunnel magnetoresistance
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Ikegawa, S., Asao, Y., Saito, Y., Takahashi, S., Kai, T., Tsuchida, K., & Yoda, H. (2003). A fully integrated 1 kb magnetoresistive random access memory with a double magnetic tunnel junction. Japanese Journal of Applied Physics, Part 2: Letters, 42(7 A), L745-L747. https://doi.org/10.1143/jjap.42.l745