A freestanding GaN/HfO2 membrane grown by molecular beam epitaxy for GaNSi hybrid MEMS

Hidehisa Sameshima, Masashi Wakui, Fang Ren Hu, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Combination of GaN light source and Si-microelectromechanical systems (MEMSs) is a promising hybrid structure for optical MEMS. As one of GaNSi hybrid structures, a freestanding GaN/HfO2 membrane was fabricated on Si substrate. Unlike conventional GaN membrane on Si substrate, the fabricated membrane had a tensile stress by using the HfO2 layer. Therefore, the GaN/HfO2 membrane was flat enough to be useful for several MEMS. The GaN crystal was grown by molecular beam epitaxy on the HfO2 layer deposited on Si substrate. The surface of the HfO2 layer was nitrified before GaN crystal growth, and thus, a part of HfO2surface was changed to HfN, the lattice of which matched well to that of GaN. The characteristics of the GaN crystal grown on the nitrified HfO2 layer were also investigated.

Original languageEnglish
Article number4982730
Pages (from-to)1332-1337
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number5
Publication statusPublished - 2009 Sep 1


  • Ga compounds
  • Hafnium compounds
  • Microelectromechanical devices

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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