Abstract
Combination of GaN light source and Si-microelectromechanical systems (MEMSs) is a promising hybrid structure for optical MEMS. As one of GaNSi hybrid structures, a freestanding GaN/HfO2 membrane was fabricated on Si substrate. Unlike conventional GaN membrane on Si substrate, the fabricated membrane had a tensile stress by using the HfO2 layer. Therefore, the GaN/HfO2 membrane was flat enough to be useful for several MEMS. The GaN crystal was grown by molecular beam epitaxy on the HfO2 layer deposited on Si substrate. The surface of the HfO2 layer was nitrified before GaN crystal growth, and thus, a part of HfO2surface was changed to HfN, the lattice of which matched well to that of GaN. The characteristics of the GaN crystal grown on the nitrified HfO2 layer were also investigated.
Original language | English |
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Article number | 4982730 |
Pages (from-to) | 1332-1337 |
Number of pages | 6 |
Journal | IEEE Journal on Selected Topics in Quantum Electronics |
Volume | 15 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2009 Sep 1 |
Keywords
- Ga compounds
- Hafnium compounds
- Microelectromechanical devices
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering