A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

Akira Satou, Gen Tamamushi, Kenta Sugawara, Junki Mitsushio, Victor Ryzhii, Taiichi Otsuji

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A fitting model is developed for accounting the asymmetric ambipolarities in the I- V characteristics of graphene FETs (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.

Original languageEnglish
Article number7497579
Pages (from-to)3300-3306
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume63
Issue number8
DOIs
Publication statusPublished - 2016 Jan 1

Keywords

  • Fitting of I-V characteristic
  • graphene FET (G-FET)
  • interband tunneling
  • intrinsic mobility
  • thermionic emission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities'. Together they form a unique fingerprint.

  • Cite this