A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

Hidemi Toyosaki, Tomoteru Fukumura, Kazunori Ueno, Masaki Nakano, Masashi Kawasaki

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ and ferromagnetic metal Fe0.1Co0.9 separated by AlO x barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ∼11% at 15 K, indicating that Ti1-xCoxO 2-δ can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.

Original languageEnglish
Pages (from-to)L896-L898
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number28-32
DOIs
Publication statusPublished - 2005 Dec 1

Keywords

  • Co-doped TiO
  • Ferromagnetic semiconductor
  • Magnetic tunnel junction
  • Oxide semiconductor
  • Tunneling magnetoresistance
  • Wide gap semiconductor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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